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Nanoscale electrostatic actuators in liquid electrolytesBOYD, James G; KIM, Doyoung.Journal of colloid and interface science. 2006, Vol 301, Num 2, pp 542-548, issn 0021-9797, 7 p.Article

A method of genetic algorithm based multiobjective optimization via cooperative coevolutionLEE, Jongsoo; KIM, Doyoung.Journal of mechanical science and technology. 2006, Vol 20, Num 12, pp 2115-2123, issn 1738-494X, 9 p.Article

Assessing the reliability of the beck anxiety inventory scoresDE AYALA, R. J; VONDERHARR-CARLSON, D. J; KIM, Doyoung et al.Educational and psychological measurement. 2005, Vol 65, Num 5, pp 836-850, issn 0013-1644, 15 p.Article

The properties of plasma-enhanced atomic layer deposition (ALD) ZnO thin films and comparison with thermal ALDKIM, Doyoung; KANG, Hyemin; KIM, Jae-Min et al.Applied surface science. 2011, Vol 257, Num 8, pp 3776-3779, issn 0169-4332, 4 p.Article

The formation of sub-10 nm nanohole array on block copolymer thin films on gold surface using surface neutralization based on O2 plasma treatment and self-assembled monolayerHWANG, Inchan; KIM, Doyoung; LEE, Byeong-Joo et al.Surface science. 2010, Vol 604, Num 11-12, pp 1034-1039, issn 0039-6028, 6 p.Article

Porous graphene/carbon nanotube composite cathode for proton exchange membrane fuel cellYOUNG SOO YUN; KIM, Doyoung; TAK, Yongsug et al.Synthetic metals. 2011, Vol 161, Num 21-22, pp 2460-2465, issn 0379-6779, 6 p.Article

Self textured transparent conductive oxide film for efficiency improvement in solar cellKIM, Doyoung; JUNSIN YI; KIM, Hyungjun et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7603, issn 0277-786X, isbn 978-0-8194-7999-0 0-8194-7999-3, 1Vol, 76030G.1-76030G.9Conference Paper

Band gaps of Lamb waves propagating in one-dimensional periodic and nesting Fibonacci superlattices thin platesMIN ZHAO; XIE, Ya-Zhuo; ZHANG, Xing-Gan et al.Thin solid films. 2013, Vol 546, pp 439-442, issn 0040-6090, 4 p.Conference Paper

Effect of gate electrode conductivity on operation frequency of inkjet-printed complementary polymer ring oscillatorsHYUN HAN; AMEGADZE, Paul S. K; JONGWOON PARK et al.Thin solid films. 2013, Vol 546, pp 141-146, issn 0040-6090, 6 p.Conference Paper

Effect of substrate temperature on the properties of electron beam deposited tantalum filmsARSHI, Nishat; JUNQING LU; CHAN GYU LEE et al.Thin solid films. 2013, Vol 546, pp 22-25, issn 0040-6090, 4 p.Conference Paper

Growth of Eu-doped ZnO nanorods on silicon substrate by low temperature hydrothermal methodJUNG, Yong-Il; BAEK, Seong-Ho; PARK, Il-Kyu et al.Thin solid films. 2013, Vol 546, pp 259-262, issn 0040-6090, 4 p.Conference Paper

High-quality nonpolar ZnO thin films grown on r-plane sapphire by radio frequency-magnetron sputteringHWANG, Dae-Kue; KIM, Kang-Pil; KIM, Dae-Hwan et al.Thin solid films. 2013, Vol 546, pp 18-21, issn 0040-6090, 4 p.Conference Paper

Scanning probe study on the photovoltaic characteristics of a Si solar cell by using Kelvin force microscopy and photoconductive atomic force microscopyJINHEE HEO; SOONHO WON.Thin solid films. 2013, Vol 546, pp 353-357, issn 0040-6090, 5 p.Conference Paper

Surface characteristics of hydroxyapatite films deposited on anodized titanium by an electrochemical methodKANG LEE; JEONG, Yong-Hoon; BRANTLEY, William A et al.Thin solid films. 2013, Vol 546, pp 185-188, issn 0040-6090, 4 p.Conference Paper

Temperature dependent spin injection properties of the Ni nanodots embedded metallic TiN matrix and p-Si heterojunctionPANDA, J; CHATTOPADHYAY, S; NATH, T. K et al.Thin solid films. 2013, Vol 546, pp 211-218, issn 0040-6090, 8 p.Conference Paper

The improvement on the performance of quantum dot-sensitized solar cells with functionalized SiHYUNWOONG SEO; YUTING WANG; SATO, Muneharu et al.Thin solid films. 2013, Vol 546, pp 284-288, issn 0040-6090, 5 p.Conference Paper

Uncertainty compensation methods for quantitative hardness measurement of materials using atomic force microscope nanoindentation techniqueJUNGMIN LEE; CHUNG YI KIM; MINHO JOO et al.Thin solid films. 2013, Vol 546, pp 448-452, issn 0040-6090, 5 p.Conference Paper

Defects of diamond single crystal grown under high temperature and high pressureQINGCAI SU; JIANHUA ZHANG; MUSEN LI et al.Thin solid films. 2013, Vol 546, pp 457-460, issn 0040-6090, 4 p.Conference Paper

Dielectric functions of In1―xAlxSb alloys for arbitrary compositions with parametric modelingDIWARE, Mangesh S; TAE JUNG KIM; JAE JIN YOON et al.Thin solid films. 2013, Vol 546, pp 26-30, issn 0040-6090, 5 p.Conference Paper

Direct contact of indium tin oxide layer to Al(Ni) alloy electrodes for a-Si:H thin film transistors: Effects of Ni alloying on interfacial oxide growth and contact resistanceDOOMAN HAN; KYUNGHOON JEONG; NAM, Ho-Seok et al.Thin solid films. 2013, Vol 546, pp 9-13, issn 0040-6090, 5 p.Conference Paper

Effect of CdCl2 treatment on structural and electronic property of CdTe thin films deposited by magnetron sputteringISLAM, M. A; HOSSAIN, M. S; ALIYU, M. M et al.Thin solid films. 2013, Vol 546, pp 367-374, issn 0040-6090, 8 p.Conference Paper

Fabrication of thin silica layer-coated magnetite clusters (nFe3O4/silica) as anode materials for improved Li-ion batteriesOH, Hang-Deok; LEE, Sang-Wha.Thin solid films. 2013, Vol 546, pp 200-204, issn 0040-6090, 5 p.Conference Paper

Ferroelectric properties of the organic films of polyvinylidene fluoride-trifluoroethylene blended with inorganic Pb(Zr, Ti)O3LEE, Wan-Gyu; BYUNG EUN PARK; KYUNG EUN PARK et al.Thin solid films. 2013, Vol 546, pp 171-175, issn 0040-6090, 5 p.Conference Paper

Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowingSHIN, In-Su; DONGHYUN LEE; LEE, Keon-Hoon et al.Thin solid films. 2013, Vol 546, pp 118-123, issn 0040-6090, 6 p.Conference Paper

Interfacial barrier height modification of indium tin oxide/a-Si:H(p) via control of density of interstitial oxygen for silicon heterojunction solar cell applicationSHIHYUN AHN; SUNBO KIM; JAEHYUN CHO et al.Thin solid films. 2013, Vol 546, pp 342-346, issn 0040-6090, 5 p.Conference Paper

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